Low Pressure Chemical Vapour Deposition Furnace for Low Temperature Silicon Dioxide

Low Pressure Chemical Vapour Deposition Furnace for Low Temperature Silicon Dioxide Centrotherm Usage Modus Operandi:Service-Mode Contamination category:A Sample-size:up to 25 wafers per run; 9 samples (max. 2×2 cm) FOM-Name and Location FOM-Name:- AMO – LPCVD-LTO Location:AMO Resources Tool manager: AMO Instruction video: Not available Tool description: LTO (low temp. SiO2); 425°C; SiH4 and O2 process; […]

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Low Pressure Chemical Vapour Deposition Furnace for Polycrystalline Silicon

Low Pressure Chemical Vapour Deposition Furnace for Polycrystalline Silicon Centrotherm Usage Modus Operandi:Service-Mode Contamination category:A Sample-size:up to 25 wafers per run; 15×15 cm tray for samples FOM-Name and Location FOM-Name:- AMO – LPCVD-Poly Location:AMO Resources Tool manager: AMO Instruction video: Not available Tool description: Polysilicon; 620°C; SiH4 process; up to 500 nm

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PECVD (Petzi)

Plasma-Enhanced Chemical Vapor Deposition System Oxford Instruments, PlasmaLab 80 Plus Usage Modus Operandi: … Contamination category: C Sample-size:Pieces … 4″ FOM-Name and Location FOM-Name:PECVD (Petzi) Location:CMNT, Room 004 Resources Tool manager: Jan Gruis Instruction video: Open video Tool description: Oxford Instruments, PlasmaLab 80 Plus Parallel-plate PECVD Process gases: SiH4, O2, NH3

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Clustertool (ALD+ICP-CVD)

Cluster Tool for Atomic Layer Deposition and Inductively Coupled Plasma Chemical Vapor Deposition Oxford Instruments, PlasmalabSystem 100 Usage Modus Operandi:User-mode Contamination category: B Sample-size:Pieces … 6″ wafers,8″ wafer possible with small modifications FOM-Name and Location FOM-Name:– IHT – Cluster-Tool (ALD and ICP-CVD) Location:WSH, Room 24B101 Resources Tool manager: Birger Berghoff Instruction video: Open video Tool […]

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