Low Pressure Chemical Vapour Deposition Furnace for Low Temperature Silicon Dioxide

Joachim Knoch Available Processing Tools, Chemical Vapor Deposition

Low Pressure Chemical Vapour Deposition Furnace for Low Temperature Silicon Dioxide

Centrotherm

Usage

  • Modus Operandi:
    Service-Mode
  • Contamination category:
    A
  • Sample-size:
    up to 25 wafers per run; 9 samples (max. 2x2 cm)

FOM-Name and Location

  • FOM-Name:
    - AMO - LPCVD-LTO
  • Location:
    AMO

Resources

  • Tool manager:
    AMO
  • Instruction video:
    Not available
  • Tool description:
    LTO (low temp. SiO2); 425°C; SiH4 and O2 process; up to 500 nm