Dry Etching

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  • Reactive-Ion Etching System

    Oxford Instruments, RIE 80

    Usage

    • Modus Operandi:
      User-Mode
    • Contamination category:
      C
    • Sample-size:
      100 mm, 150 mm Wafer

    FOM-Name and Location

    • FOM-Name:
      - RIE (RIE 80)
    • Location:
      ZMNT, Room 006

    Resources

    • Tool manager:
      Jochen Heiss
    • Instruction video:
      Not available
    • Tool description:
      Etching gases: N2, O2, CHF3, CF4, SF6, Ar
    Continue reading →
  • Reactive-Ion Etching System

    Tegal, 901

    Usage

    • Modus Operandi:
      User-Mode
    • Contamination category:
      C
    • Sample-size:
      100 mm Wafer

    FOM-Name and Location

    • FOM-Name:
      - RIE (Tegal 901)
    • Location:
      ZMNT, Room 006

    Resources

    • Tool manager:
      Jochen Heiss
    • Instruction video:
      Not available
    • Tool description:
      Etching gases: N2, O2, CHF3, CF4, SF6, Ar
    Continue reading →
  • Inductively-Coupled Plasma Reactive Ion Etching System

    Oxford Instruments, PlasmaLab System 100

    Usage

    • Modus Operandi:
      Service-Mode
    • Contamination category:
      Chamber 1: A
      Chamber 2: B
    • Sample-size:
      up to 6″ substrates; 6" dummy wafer for samples

    FOM-Name and Location

    • FOM-Name:
      - AMO - RIE1
    • Location:
      AMO

    Resources

    • Tool manager:
      AMO
    • Instruction video:
      Not available
    • Tool description:
      ICP-RIE; automatic 2 chamber system; mainly chlorine and bromine based chemistry; process gases: HBr, BCl3, Cl2, C4F8, CHF3, CF4, SF6, O2, N2, Ar, He
    Continue reading →
  • Parallel-Plate Reactive Ion Etching Tool

    MRC, RIE-51

    Usage

    • Modus Operandi:
      User-mode
    • Contamination category: A, B, C
    • Sample-size:
      Pieces ... 4″
    Parallel-Plate Reactive Ion Etching

    FOM-Name and Location

    • FOM-Name:
      RIE 51
    • Location:
      WSH, Room 24B131

    Resources

    • Tool manager:
      Birger Berghoff
    • Instruction video:
      Open video
    • Tool description:
      SF6, CHF3, O2 and BCl3 based etching
    Continue reading →
  • Inductively Coupled Plasma Reactive-Ion Etcher

    SENTECH, ICP-RIE SI 500

    Usage

    • Modus Operandi:
      ...
    • Contamination category: C
    • Sample-size:
      Pieces ... 4″
    ICP-RIE Reactive Ion Etching

    FOM-Name and Location

    • FOM-Name:
      ICP-RIE (Fluorian)
    • Location:
      CMNT, Room 004

    Resources

    • Tool manager:
      Jan Gruis
    • Instruction video:
      Open video
    • Tool description:
      SENTECH ICP-RIE SI500
      Flourine-based process gases
    Continue reading →
  • Plasma Asher

    Alpha Plasma, PP35

    Usage

    • Modus Operandi:
      User-mode
    • Contamination category: C
    • Sample-size:
      Pieces ... 4″
    Plasma Asher

    FOM-Name and Location

    • FOM-Name:
      - Physik - Plasma Asher
    • Location:
      Physikzentrum, Room 28A313

    Resources

    • Tool manager:
      Lars Schreiber
    • Instruction video:
      Open video
    • Tool description:
      Alpha Plasma, PP35
    Continue reading →
  • Plasma Asher

    Tegal, 915

    Usage

    • Modus Operandi:
      User-mode
    • Contamination category: B,C (B if appropriate handling wafer is used)
    • Sample-size:
      Pieces ... 6″ wafers
    O2 Plasma Asher

    FOM-Name and Location

    • FOM-Name:
      N.N.
    • Location:
      CMNT, Room 009

    Resources

    Continue reading →
  • Barrel Plasma Asher/SF6 Plasma Etcher

    Oxford Instruments, Plasmalab PRS 90

    Usage

    • Modus Operandi:
      User-mode
    • Contamination category:
      B,C if appriate handle wafers are used
    • Sample-size:
      Pieces ... 6″ wafers
    Oxford Barrel Plasma Asher/SF6 Plasma EtcherBruker DEKTAK XT

    FOM-Name and Location

    • FOM-Name:
      – IHT – Plasma Asher
    • Location:
      WSH, Room 24B132

    Resources

    Continue reading →
  • Inductively Coupled Plasma Deep Reactive-Ion Etching System

    Oxford Instruments, PlasmaPro 100 Cobra ICP Etch System

    Usage

    • Modus Operandi:
      User-mode
    • Contamination category: A, B
    • Sample-size:
      Pieces ... 4″ wafers,
      8″ wafers possible with small modifications
    Oxford Deep Reactive Ion Etcher

    FOM-Name and Location

    Resources

    • Tool manager: Birger Berghoff
    • Instruction video: Open video
    • Tool description: 
    Continue reading →

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